Thyristor

Thyristor

A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zo...

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Hauptverfasser: JAECKLIN, ANDRE A, LIETZ, MANFRED, CORNU, JOSEF
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator JAECKLIN
ANDRE A
LIETZ
MANFRED
CORNU
JOSEF
description A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zones. The second sequence of zones is also more heavily doped at its outer extremities than the first sequence of zones. A method of making the improved thyristor is also disclosed and includes the step of diffusing recombination centers into the second sequence of zones in order to decrease carrier lifetime.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US3943549A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US3943549A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US3943549A3</originalsourceid><addsrcrecordid>eNrjZOAMyagsyiwuyS_iYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocHGlibGpiaWjsaEVQAASlEcPA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thyristor</title><source>esp@cenet</source><creator>JAECKLIN; ANDRE A ; LIETZ; MANFRED ; CORNU; JOSEF</creator><creatorcontrib>JAECKLIN; ANDRE A ; LIETZ; MANFRED ; CORNU; JOSEF</creatorcontrib><description>A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zones. The second sequence of zones is also more heavily doped at its outer extremities than the first sequence of zones. A method of making the improved thyristor is also disclosed and includes the step of diffusing recombination centers into the second sequence of zones in order to decrease carrier lifetime.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1976</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19760309&amp;DB=EPODOC&amp;CC=US&amp;NR=3943549A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19760309&amp;DB=EPODOC&amp;CC=US&amp;NR=3943549A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JAECKLIN; ANDRE A</creatorcontrib><creatorcontrib>LIETZ; MANFRED</creatorcontrib><creatorcontrib>CORNU; JOSEF</creatorcontrib><title>Thyristor</title><description>A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zones. The second sequence of zones is also more heavily doped at its outer extremities than the first sequence of zones. A method of making the improved thyristor is also disclosed and includes the step of diffusing recombination centers into the second sequence of zones in order to decrease carrier lifetime.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1976</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAMyagsyiwuyS_iYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocHGlibGpiaWjsaEVQAASlEcPA</recordid><startdate>19760309</startdate><enddate>19760309</enddate><creator>JAECKLIN; ANDRE A</creator><creator>LIETZ; MANFRED</creator><creator>CORNU; JOSEF</creator><scope>EVB</scope></search><sort><creationdate>19760309</creationdate><title>Thyristor</title><author>JAECKLIN; ANDRE A ; LIETZ; MANFRED ; CORNU; JOSEF</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US3943549A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1976</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JAECKLIN; ANDRE A</creatorcontrib><creatorcontrib>LIETZ; MANFRED</creatorcontrib><creatorcontrib>CORNU; JOSEF</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JAECKLIN; ANDRE A</au><au>LIETZ; MANFRED</au><au>CORNU; JOSEF</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thyristor</title><date>1976-03-09</date><risdate>1976</risdate><abstract>A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zones. The second sequence of zones is also more heavily doped at its outer extremities than the first sequence of zones. A method of making the improved thyristor is also disclosed and includes the step of diffusing recombination centers into the second sequence of zones in order to decrease carrier lifetime.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Thyristor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T07%3A12%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JAECKLIN;%20ANDRE%20A&rft.date=1976-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS3943549A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true