Magnetosensitive thin film semiconductor element and a process for manufacturing same

A magnetosensitive thin film semiconductor element having the structure in which said element is comprised of a substrate of a material exhibiting a high magnetic permeability, the surface of which has channels of a desired pattern and depth, and comprised of a thin film embedded therein, said substrate, if necessary, being covered by an insulator film, and a process for manufacturing the semiconductor element, which comprises steps of depositing a semiconductor thin film by, for example, vacuum evaporation over the entire surface of the substrate and thereafter removing the amount of the thin film which was not deposited inside said channels, by polishing or grinding. In accordance with the process, the thin film semiconductor element having a uniform thickness of thin film can be easily obtained and is not affected by mechanical pressure applied in the subsequent step.