Formation of composite oxides on III-V semiconductors

A method of forming a composite oxide on III-V compound semiconductors is disclosed. An oxidizable metal such as Al, Ni, Ta, Ti, Zn or alloys including said metals is deposited on the surface of the semiconductor or on a native oxide grown on the semiconductor. The structure is subjected to an elect...

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Bibliographische Detailangaben

Hauptverfasser:	WEIGLE, GREGORY DYETT, SPITZER, STUART MARSHALL, SCHWARTZ, BERTRAM
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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