Method for fabricating aluminum interconnection metallurgy system for silicon devices

A method of fabricating an improved aluminum metallurgy system of conductive stripes on a monocrystalline silicon semiconductor device that makes electrical contact with the body of the device through at least one opening in an insulating layer, wherein there is formed a blanket layer of aluminum ov...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHNITZEL, RANDOLPH H, WALDMAN, DAVID P, GREER, STUART E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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