Additives to negative photoresists which increase the sensitivity thereof

The use of a scanning electron beam to generate a pattern in a negative photoresist is known. Electron beam equipment can be made which is capable of scanning very quickly, but standard negative photoresists require such a large flux of electrons for proper exposure that the scanning equipment must...

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Hauptverfasser:	BROYDE, BARRET
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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creator	BROYDE BARRET
description	The use of a scanning electron beam to generate a pattern in a negative photoresist is known. Electron beam equipment can be made which is capable of scanning very quickly, but standard negative photoresists require such a large flux of electrons for proper exposure that the scanning equipment must be operated at speeds substantially slower than the capability of the equipment. By adding certain compounds which dissociate readily into free radicals to the photoresist, the sensitivity or speed of the photoresist is effectively increased. As a result, the electron beam can scan at a higher rate. Compounds which are most effective are benzophenone, benzil and 1,4-diphenyl-1,3-butadiene.
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Electron beam equipment can be made which is capable of scanning very quickly, but standard negative photoresists require such a large flux of electrons for proper exposure that the scanning equipment must be operated at speeds substantially slower than the capability of the equipment. By adding certain compounds which dissociate readily into free radicals to the photoresist, the sensitivity or speed of the photoresist is effectively increased. As a result, the electron beam can scan at a higher rate. Compounds which are most effective are benzophenone, benzil and 1,4-diphenyl-1,3-butadiene.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>1975</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19750211&DB=EPODOC&CC=US&NR=3865597A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19750211&DB=EPODOC&CC=US&NR=3865597A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BROYDE; BARRET</creatorcontrib><title>Additives to negative photoresists which increase the sensitivity thereof</title><description>The use of a scanning electron beam to generate a pattern in a negative photoresist is known. Electron beam equipment can be made which is capable of scanning very quickly, but standard negative photoresists require such a large flux of electrons for proper exposure that the scanning equipment must be operated at speeds substantially slower than the capability of the equipment. By adding certain compounds which dissociate readily into free radicals to the photoresist, the sensitivity or speed of the photoresist is effectively increased. As a result, the electron beam can scan at a higher rate. Compounds which are most effective are benzophenone, benzil and 1,4-diphenyl-1,3-butadiene.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1975</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFi70KAjEQBtNYiPoM7gtYHedPeYiitVofIfedWTiyIbsovr0E7K2GgZm5u3bDwMYvKJlQwtNXoRzFpEBZTekdOUTiFAq8giyCFEnrxvapXiDj0s1GPylWPy7c-ny6Hy8bZOmh2QckWP-4Nftt2x52XfO_-AKDSjUQ</recordid><startdate>19750211</startdate><enddate>19750211</enddate><creator>BROYDE; BARRET</creator><scope>EVB</scope></search><sort><creationdate>19750211</creationdate><title>Additives to negative photoresists which increase the sensitivity thereof</title><author>BROYDE; BARRET</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US3865597A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1975</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>BROYDE; BARRET</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BROYDE; BARRET</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Additives to negative photoresists which increase the sensitivity thereof</title><date>1975-02-11</date><risdate>1975</risdate><abstract>The use of a scanning electron beam to generate a pattern in a negative photoresist is known. Electron beam equipment can be made which is capable of scanning very quickly, but standard negative photoresists require such a large flux of electrons for proper exposure that the scanning equipment must be operated at speeds substantially slower than the capability of the equipment. By adding certain compounds which dissociate readily into free radicals to the photoresist, the sensitivity or speed of the photoresist is effectively increased. As a result, the electron beam can scan at a higher rate. Compounds which are most effective are benzophenone, benzil and 1,4-diphenyl-1,3-butadiene.</abstract><oa>free_for_read</oa></addata></record>
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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
title	Additives to negative photoresists which increase the sensitivity thereof
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