PRODUCTION OF SiO{11 {11 TAPERED FILMS
During SiO2 etching, when the oxide surface etch rate is larger than the bulk etch rate and the photoresist adheres tenaciously to the surface, a near vertical wall or cusp will be formed. This will create potential fracture spots in sputtered or evaporated metal which covers the steps. In the fabri...
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| creator | MAC RAE A,US MOLINE R,US |
| description | During SiO2 etching, when the oxide surface etch rate is larger than the bulk etch rate and the photoresist adheres tenaciously to the surface, a near vertical wall or cusp will be formed. This will create potential fracture spots in sputtered or evaporated metal which covers the steps. In the fabrication of self-aligned gate IGFETs, where the gate material acts as a mask against either etching or ion implantation, holes in the step metal will allow regions under the nominal gate to be doped during the source-drain doping. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS |
| title | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
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