INTEGRATED CIRCUITS COMPRISING LATERAL TRANSISTORS AND PROCESS FOR FABRICATION THEREOF

A "lateral" transistor for use in integrated circuits may have its base region formed by a technique of "ion implantation" with or without a step of impurity diffusion or, alternatively, by two steps of impurity diffusion including the formation of the so-called "buried"...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TARUI T,JA, KOMIYA Y,JA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!