METHOD AND APPARATUS FOR ETCHING FINE LINE PATTERNS IN METAL ON SEMICONDUCTIVE DEVICES

A method for etching fine line patterns in a metal film overlaying an apertured insulative layer on a semiconductive substrate is disclosed. In the method, a layer of etch-resistance material is deposited over the metal film to be etched, such etch-resistance layer being apertured with a fine line aperture pattern portion and an open field aperture portion. The open field portion is disposed overlaying the non-apertured portion of the insulative layer. In addition, the layer of etch-resistant material includes a contactor portion bridging between the open field portion of the aperture pattern therein and a nearby aperture through the insulative layer to the semiconductive substrate to protect, from the etchant, a conductive bridge between the semiconductive substrate and the field portion of the metal film to be etched. The conductive bridge forms a conductive path independent of the active semiconductive junctions of the semiconductive device being formed. The metal film is then preferably etched in an electrolytic cell.