VAPOR GROWTH PROCESS FOR GALLIUM ARSENIDE

A process is provided for vapor growing a gallium arsenide single crystal layer on a substrate seed-crystal of gallium arsenide having a uniform electron concentration profile in the layer wherein at least two kinds of impurities of the same conductivity type are employed, one which causes autodopin...

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Bibliographische Detailangaben
Hauptverfasser:	MITSUHIRO MARUYAMA, OSAMU MIZUNO, SADAO KIKUCHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A process is provided for vapor growing a gallium arsenide single crystal layer on a substrate seed-crystal of gallium arsenide having a uniform electron concentration profile in the layer wherein at least two kinds of impurities of the same conductivity type are employed, one which causes autodoping to occur in the vapor-grown crystal, the other which tends to inhibit autodoping.