METHOD FOR PREPARING SINGLE CRYSTAL PSEUDOBINARY ALLOYS
1284419 Progressive crystallization TEXAS INSTRUMENTS Inc 14 Oct 1969 [31 Dec 1968] 50405/69 Heading BIS [Also in Divisions Cl and C7] Large homogeneous single crystals of a pseudobinary alloy are produced from a highly polycrystalline ingot by slowly passing a temperature gradient from one end of t...
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| creator | ROWLAND E. JOHNSON |
| description | 1284419 Progressive crystallization TEXAS INSTRUMENTS Inc 14 Oct 1969 [31 Dec 1968] 50405/69 Heading BIS [Also in Divisions Cl and C7] Large homogeneous single crystals of a pseudobinary alloy are produced from a highly polycrystalline ingot by slowly passing a temperature gradient from one end of the ingot to the other until all of the ingot is at approximately the same temperature just below the solidus temperature of the alloy. The highly polycrystalline ingot may be prepared by rapidly freezing a liquid mixture of the components of the alloy. The alloy may comprise at least two compounds, each compound being formed by an element from Group II and an element from Group VI preferably mercury telluride and cadmium telluride; an element from Group III and an element from Group V preferably indium arsenide and indium antimonide; or an element from Group IV and an element from Group VI preferably lead telluride and tin telluride. The preferred alloy is Hg 0À79 Cd 0À21 Te 1-1À02 . |
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JOHNSON</creatorcontrib><description>1284419 Progressive crystallization TEXAS INSTRUMENTS Inc 14 Oct 1969 [31 Dec 1968] 50405/69 Heading BIS [Also in Divisions Cl and C7] Large homogeneous single crystals of a pseudobinary alloy are produced from a highly polycrystalline ingot by slowly passing a temperature gradient from one end of the ingot to the other until all of the ingot is at approximately the same temperature just below the solidus temperature of the alloy. The highly polycrystalline ingot may be prepared by rapidly freezing a liquid mixture of the components of the alloy. The alloy may comprise at least two compounds, each compound being formed by an element from Group II and an element from Group VI preferably mercury telluride and cadmium telluride; an element from Group III and an element from Group V preferably indium arsenide and indium antimonide; or an element from Group IV and an element from Group VI preferably lead telluride and tin telluride. 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The alloy may comprise at least two compounds, each compound being formed by an element from Group II and an element from Group VI preferably mercury telluride and cadmium telluride; an element from Group III and an element from Group V preferably indium arsenide and indium antimonide; or an element from Group IV and an element from Group VI preferably lead telluride and tin telluride. 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The alloy may comprise at least two compounds, each compound being formed by an element from Group II and an element from Group VI preferably mercury telluride and cadmium telluride; an element from Group III and an element from Group V preferably indium arsenide and indium antimonide; or an element from Group IV and an element from Group VI preferably lead telluride and tin telluride. The preferred alloy is Hg 0À79 Cd 0À21 Te 1-1À02 .</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TREATMENT OF ALLOYS OR NON-FERROUS METALS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR PREPARING SINGLE CRYSTAL PSEUDOBINARY ALLOYS |
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