Method for fabricating insulated-gate field effect transistor

1,095,412. Making IGFET. INTERNATIONAL BUSINESS MACHINES CORPORATION. Aug. 4, 1965 [Aug. 26, 1964], No. 33292/65. Heading H1K. In the manufacture of an IGFET impurities are introduced into the gate insulation which is then subjected to an electric field while the transistor is heated. This process l...

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Hauptverfasser:	BRENNEMANN ANDREW E, SERAPHIM DONALD P, TANSAL SABIH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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