ETCHING METHOD

Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOBAYASHI, Hiroyuki, ZHAO, Yu, OTAKE, Hiroto, HATTORI, Takashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!