GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
A method of producing a group III nitride single crystal substrate includes: processing a face of a group III nitride single crystal layer of a layered body, so that the face is parallel to a crystal lattice plane, the layered body including a base substrate, and the group III nitride single crystal...
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| creator | YAMAMOTO, Reo HITOMI, Tatsuya FUKUDA, Masayuki |
| description | A method of producing a group III nitride single crystal substrate includes: processing a face of a group III nitride single crystal layer of a layered body, so that the face is parallel to a crystal lattice plane, the layered body including a base substrate, and the group III nitride single crystal layer over the base substrate; after said processing, cutting and separating a group III nitride single crystal in a form of plate from the base substrate or the group III nitride single crystal layer, or cutting and separating the base substrate and the group III nitride single crystal layer on an interface therebetween in a form of plate; and after said cutting and separating, polishing a cut surface of the group III nitride single crystal, the cut surface being formed by said cutting. |
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after said processing, cutting and separating a group III nitride single crystal in a form of plate from the base substrate or the group III nitride single crystal layer, or cutting and separating the base substrate and the group III nitride single crystal layer on an interface therebetween in a form of plate; and after said cutting and separating, polishing a cut surface of the group III nitride single crystal, the cut surface being formed by said cutting.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; METALLURGY ; PERFORMING OPERATIONS ; POLISHING ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; 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after said processing, cutting and separating a group III nitride single crystal in a form of plate from the base substrate or the group III nitride single crystal layer, or cutting and separating the base substrate and the group III nitride single crystal layer on an interface therebetween in a form of plate; and after said cutting and separating, polishing a cut surface of the group III nitride single crystal, the cut surface being formed by said cutting.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY PERFORMING OPERATIONS POLISHING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS |
| title | GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE |
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