INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

An integrated circuit semiconductor device includes a base layer including a first surface and a second surface, a gate structure on the first surface of the base layer, a first source and drain region on a side of the gate structure, a second source and drain region on another side of the gate stru...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Han, Sunggyu, Park, Juneyoung, Shin, Heonjong, Lee, Sanghee, Jang, Jaeran, Chung, Mingi
Format: Patent
Sprache:eng
Schlagworte:
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