GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AND METHOD OF FABRICATION

A GaN semiconductor power transistor structure with a slanted gate field plate, and a method of fabrication are disclosed. The gate field plate comprises a gate metal field plate and slanted gate field plate structure formed using contact metal and/or interconnect metal. The slanted structure of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MACELWEE, Thomas, DIXIT, Abhinandan, PRASAD, Jayasimha, UNNI, Vineet
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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