MOSFET-Based RF Switch with Charge Reduction

An RF switch device includes transistors coupled in series to form a current path; a drain-source resistive bias network coupled to a drain and a source of each transistor; and a discharge switch coupled between a gate of at least one transistor and the drain-source resistive bias network, wherein t...

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Hauptverfasser:	Syroiezhin, Semen, Bänisch, Andreas, Solomko, Valentyn
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
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creator	Syroiezhin, Semen Bänisch, Andreas Solomko, Valentyn
description	An RF switch device includes transistors coupled in series to form a current path; a drain-source resistive bias network coupled to a drain and a source of each transistor; and a discharge switch coupled between a gate of at least one transistor and the drain-source resistive bias network, wherein the discharge switch establishes a current path between the gate of the at least one transistor and the drain-source resistive bias network only during a switching transient of the RF switch device.
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title	MOSFET-Based RF Switch with Charge Reduction
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