SEAM FREE TITANIUM NITRIDE GAPFILL

SEAM FREE TITANIUM NITRIDE GAPFILL

Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Tripathy, Abinash, Patil, Radhika P, Jackson, Michael S, Sha, Haoyan, Devrajan, Janardhan, Sato, Tatsuya E
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.