SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING

SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING

A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of sta...

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Hauptverfasser: BIOLSI, Peter, ZHANG, Du, LEFEVRE, Scott, SHEARER, Jeffrey
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BIOLSI, Peter
ZHANG, Du
LEFEVRE, Scott
SHEARER, Jeffrey
description A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of stages exposes the initial portion of the recess based on ions. A third one of the plurality of stages extends the initial portion of the recess based on second etchant radicals.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SYSTEMS AND METHODS FOR SEMICONDUCTOR ETCHING
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