SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

This semiconductor apparatus has a base film and a semiconductor film formed on the base film, wherein the base film comprises a polyimide obtained by condensation polymerization of an aromatic diamine and an aromatic tetracarboxylic acid anhydride and has a tensile elasticity in the machine directi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MAEDA, Satoshi, TOKO, Kaoru, NAKAMURA, Muneatsu
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP
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Beschreibung
Zusammenfassung:	This semiconductor apparatus has a base film and a semiconductor film formed on the base film, wherein the base film comprises a polyimide obtained by condensation polymerization of an aromatic diamine and an aromatic tetracarboxylic acid anhydride and has a tensile elasticity in the machine direction of 7 GPa or more, and the semiconductor film is polycrystalline and comprises crystal particles having an average particle size of 1 μm or more.