DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION

Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through...

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Hauptverfasser: Lee, Chih-Tsung, Cheng, Kuang-Wei, Huang, Sung-Ju, Liu, Yung-Tsun, Ni, Chyi-Tsong
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creator Lee, Chih-Tsung
Cheng, Kuang-Wei
Huang, Sung-Ju
Liu, Yung-Tsun
Ni, Chyi-Tsong
description Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024384414A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024384414A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024384414A13</originalsourceid><addsrcrecordid>eNrjZDBwcQ3zdHZVcPRzUfB1DfHwdwlWcPMPUnD2cPX1dHb0UQhzDAByXVwD_IM9Qzz9_XgYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkYmxhYmJoYmjoTFxqgCpcycF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION</title><source>esp@cenet</source><creator>Lee, Chih-Tsung ; Cheng, Kuang-Wei ; Huang, Sung-Ju ; Liu, Yung-Tsun ; Ni, Chyi-Tsong</creator><creatorcontrib>Lee, Chih-Tsung ; Cheng, Kuang-Wei ; Huang, Sung-Ju ; Liu, Yung-Tsun ; Ni, Chyi-Tsong</creatorcontrib><description>Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241121&amp;DB=EPODOC&amp;CC=US&amp;NR=2024384414A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241121&amp;DB=EPODOC&amp;CC=US&amp;NR=2024384414A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Chih-Tsung</creatorcontrib><creatorcontrib>Cheng, Kuang-Wei</creatorcontrib><creatorcontrib>Huang, Sung-Ju</creatorcontrib><creatorcontrib>Liu, Yung-Tsun</creatorcontrib><creatorcontrib>Ni, Chyi-Tsong</creatorcontrib><title>DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION</title><description>Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBwcQ3zdHZVcPRzUfB1DfHwdwlWcPMPUnD2cPX1dHb0UQhzDAByXVwD_IM9Qzz9_XgYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkYmxhYmJoYmjoTFxqgCpcycF</recordid><startdate>20241121</startdate><enddate>20241121</enddate><creator>Lee, Chih-Tsung</creator><creator>Cheng, Kuang-Wei</creator><creator>Huang, Sung-Ju</creator><creator>Liu, Yung-Tsun</creator><creator>Ni, Chyi-Tsong</creator><scope>EVB</scope></search><sort><creationdate>20241121</creationdate><title>DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION</title><author>Lee, Chih-Tsung ; Cheng, Kuang-Wei ; Huang, Sung-Ju ; Liu, Yung-Tsun ; Ni, Chyi-Tsong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024384414A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Chih-Tsung</creatorcontrib><creatorcontrib>Cheng, Kuang-Wei</creatorcontrib><creatorcontrib>Huang, Sung-Ju</creatorcontrib><creatorcontrib>Liu, Yung-Tsun</creatorcontrib><creatorcontrib>Ni, Chyi-Tsong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Chih-Tsung</au><au>Cheng, Kuang-Wei</au><au>Huang, Sung-Ju</au><au>Liu, Yung-Tsun</au><au>Ni, Chyi-Tsong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION</title><date>2024-11-21</date><risdate>2024</risdate><abstract>Methods and systems for chemical vapor deposition (CVD) are disclosed. The methods and systems use a showerhead including a domed internal baffle plate. The domed internal baffle plate is perforated. The presence of the domed internal baffle plate improves the uniformity of gas distribution through the holes of the showerhead across the surface area of the showerhead. This improves deposition uniformity on the semiconducting wafer substrate upon which CVD is being performed, or improves the cleaning of the reaction chamber when a cleaning gas is pumped in through the showerhead.</abstract><oa>free_for_read</oa></addata></record>
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title DEVICE AND METHODS FOR CHEMICAL VAPOR DEPOSITION
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