MAGNETIC TUNNEL JUNCTION DEVICES
In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the fir...
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| creator | Chang, An-Shen Fu, Qiang Yin, Yu-Feng Peng, Tai-Yen Tsai, Han-Ting |
| description | In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024381786A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024381786A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024381786A13</originalsourceid><addsrcrecordid>eNrjZFDwdXT3cw3xdFYICfXzc_VR8Ar1cw7x9PdTcHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRibGFobmFmaOhsbEqQIAhgIi-A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MAGNETIC TUNNEL JUNCTION DEVICES</title><source>esp@cenet</source><creator>Chang, An-Shen ; Fu, Qiang ; Yin, Yu-Feng ; Peng, Tai-Yen ; Tsai, Han-Ting</creator><creatorcontrib>Chang, An-Shen ; Fu, Qiang ; Yin, Yu-Feng ; Peng, Tai-Yen ; Tsai, Han-Ting</creatorcontrib><description>In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241114&DB=EPODOC&CC=US&NR=2024381786A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241114&DB=EPODOC&CC=US&NR=2024381786A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chang, An-Shen</creatorcontrib><creatorcontrib>Fu, Qiang</creatorcontrib><creatorcontrib>Yin, Yu-Feng</creatorcontrib><creatorcontrib>Peng, Tai-Yen</creatorcontrib><creatorcontrib>Tsai, Han-Ting</creatorcontrib><title>MAGNETIC TUNNEL JUNCTION DEVICES</title><description>In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDwdXT3cw3xdFYICfXzc_VR8Ar1cw7x9PdTcHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRibGFobmFmaOhsbEqQIAhgIi-A</recordid><startdate>20241114</startdate><enddate>20241114</enddate><creator>Chang, An-Shen</creator><creator>Fu, Qiang</creator><creator>Yin, Yu-Feng</creator><creator>Peng, Tai-Yen</creator><creator>Tsai, Han-Ting</creator><scope>EVB</scope></search><sort><creationdate>20241114</creationdate><title>MAGNETIC TUNNEL JUNCTION DEVICES</title><author>Chang, An-Shen ; Fu, Qiang ; Yin, Yu-Feng ; Peng, Tai-Yen ; Tsai, Han-Ting</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024381786A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Chang, An-Shen</creatorcontrib><creatorcontrib>Fu, Qiang</creatorcontrib><creatorcontrib>Yin, Yu-Feng</creatorcontrib><creatorcontrib>Peng, Tai-Yen</creatorcontrib><creatorcontrib>Tsai, Han-Ting</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chang, An-Shen</au><au>Fu, Qiang</au><au>Yin, Yu-Feng</au><au>Peng, Tai-Yen</au><au>Tsai, Han-Ting</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETIC TUNNEL JUNCTION DEVICES</title><date>2024-11-14</date><risdate>2024</risdate><abstract>In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | MAGNETIC TUNNEL JUNCTION DEVICES |
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