RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIERS AND ROUND GATE FOOT CORNERS

A high electron mobility transistor comprising a substrate. The substrate comprising: a buffer layer, a channel layer disposed on the buffer layer, an interlayer disposed on the channel layer, a spacer layer, and a first barrier layer between the spacer layer and a cap layer, the spacer layer is bet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shinohara, Keisuke, King, Casey, Regan, Dean, Brar, Berinder
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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