ENDPOINT DETECTION IN LOW OPEN AREA AND/OR HIGH ASPECT RATIO ETCH APPLICATIONS
Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (
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| creator | KOSEKI, Shinichi WANG, Zefang WALKER, Quentin LIAN, Lei |
| description | Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area ( |
| format | Patent |
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The method begins by obtaining a reference emission curve. An etch operation is performed on a patterned substrate. A plasma optical emission intensity is measured for each of the etch cycles. A differential curve between the reference emission and the plasma optical emissions is calculated. And endpoint is determined for the etch operation on the first substrate based on an inflection point detection or other unique features through pattern recognition in the differential curve for stopping the etch of the first substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; COLORIMETRY ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241114&DB=EPODOC&CC=US&NR=2024379469A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241114&DB=EPODOC&CC=US&NR=2024379469A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOSEKI, Shinichi</creatorcontrib><creatorcontrib>WANG, Zefang</creatorcontrib><creatorcontrib>WALKER, Quentin</creatorcontrib><creatorcontrib>LIAN, Lei</creatorcontrib><title>ENDPOINT DETECTION IN LOW OPEN AREA AND/OR HIGH ASPECT RATIO ETCH APPLICATIONS</title><description>Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (<1%) on a substrate in a processing chamber. 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| subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
| title | ENDPOINT DETECTION IN LOW OPEN AREA AND/OR HIGH ASPECT RATIO ETCH APPLICATIONS |
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