SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

In some implementations, fluorine is oxidized after dry etching an oxide layer above a source/drain contact and before cleaning. Accordingly, less hydrofluoric acid is formed during cleaning, which reduces unexpected wet etching of the source/drain contact. This allows for forming a recess in the so...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG, Chi-Shin, CHIU, U-Ting, YEH, Ming-Hsi, LIN, Chun-Neng, CHOU, Chun-Cheng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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