SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor re...

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Bibliographische Detailangaben
Hauptverfasser: LU, Hsueh-Han, CHEN, Kun-Ei, WANG, Ling-Sung, CHIANG, Chen-Chieh, NIAN, Jun-Nan
Format: Patent
Sprache:eng
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