SEMICONDUCTING METAL OXIDE TRANSISTORS HAVING A PATTERNED GATE AND METHODS FOR FORMING THE SAME

A semiconductor device includes a first dielectric layer, a gate electrode embedded within the first dielectric layer, a layer stack including a gate dielectric layer, a channel layer including a semiconducting metal oxide material, and a second dielectric layer, and a source electrode and a drain e...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Yong-Jie, Ho, Yen-Chung, Yu, Chia-Jung, Hsu, Pin-Cheng, Lin, Chung-Te, Manfrini, Mauricio, Wei, Hui-Hsien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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