TSV STRUCTURE AND METHOD FORMING SAME

A method includes forming a plurality of dielectric layers over a semiconductor substrate, etching the plurality of dielectric layers and the semiconductor substrate to form an opening, depositing a first liner extending into the opening, and depositing a second liner over the first liner. The secon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Tsang-Jiuh, Yu, Chen-Hua, Chung, Ming-Tsu, Yang, Ku-Feng, Chiou, Wen-Chih
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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