METHODS FOR FORMING CONTACT PLUGS WITH REDUCED CORROSION

A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive...

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Bibliographische Detailangaben

Hauptverfasser:	Ou Yang, Liang-Yueh, Pai, Yueh-Ching, Wang, Yu-Sheng, Kao, Chen-Yuan, Hung, Chi-Cheng, Chiu, Yi-Wei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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