THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME
A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the...
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| creator | SAKANE, Kento TSUTSUMI, Masanori MORIYAMA, Takumi TANAKA, Hiroyuki HOSODA, Naohiro |
| description | A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the source layer, a memory opening vertically extending through the first-tier alternating stack, the source layer, and the second-tier alternating stack, a memory opening fill structure located in the memory opening and comprising a vertical stack of first memory elements and a vertical semiconductor channel vertically extending through each of the first electrically conductive layers, the source layer, and the second electrically conductive layers, and having a sidewall in contact with the source layer, and a bottom drain region in contact with a bottom portion of the vertical semiconductor channel. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME |
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