TEXTURED COBALT ALUMINUM/MAGNESIUM-ALUMINUM-OXIDE PEDESTAL FOR MEMORY DEVICES

A memory device including a pedestal structure containing a cobalt aluminum layer and a magnesium-aluminum-oxide containing base layer both of which have a (001) crystal orientation is provided. The memory device further includes a magnetic tunnel junction (MTJ) pillar containing an ordered alloy fo...

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Bibliographische Detailangaben

Hauptverfasser:	Brown, Stephen L, GOTTWALD, MATTHIAS GEORG, Reznicek, Alexander, Hu, Guohan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES MAGNETS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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