PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY

A photoelectric conversion apparatus includes an avalanche diode (APD) disposed in a semiconductor layer, and a first wiring structure, the APD including a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper than the first depth, a th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IWATA, JUNJI, MORIMOTO, KAZUHIRO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator IWATA, JUNJI
MORIMOTO, KAZUHIRO
description A photoelectric conversion apparatus includes an avalanche diode (APD) disposed in a semiconductor layer, and a first wiring structure, the APD including a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper than the first depth, a third semiconductor region disposed in contact with an end portion of the first semiconductor region, a first wiring portion connected to the first semiconductor region, and a second wiring portion connected to the second semiconductor region, wherein a first pad configured to apply a first voltage to the photoelectric conversion apparatus is disposed in the first wiring structure, and wherein in the planar view, at least a part of a boundary portion between an insulating film facing the first wiring portion and the second wiring portion overlaps the third semiconductor region and does not overlap the first semiconductor region.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024355951A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024355951A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024355951A13</originalsourceid><addsrcrecordid>eNrjZAgJ8PAP8Xf1cXUOCfJ0VnD29wtzDQr29PdTcAwIcAxyDAkN1lHAqSY4MjjE1VfB0c9Fwdc_zNHJx1XByd8lkoeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYmRibmlqaGjoaGhOnCgBOyDG2</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY</title><source>esp@cenet</source><creator>IWATA, JUNJI ; MORIMOTO, KAZUHIRO</creator><creatorcontrib>IWATA, JUNJI ; MORIMOTO, KAZUHIRO</creatorcontrib><description>A photoelectric conversion apparatus includes an avalanche diode (APD) disposed in a semiconductor layer, and a first wiring structure, the APD including a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper than the first depth, a third semiconductor region disposed in contact with an end portion of the first semiconductor region, a first wiring portion connected to the first semiconductor region, and a second wiring portion connected to the second semiconductor region, wherein a first pad configured to apply a first voltage to the photoelectric conversion apparatus is disposed in the first wiring structure, and wherein in the planar view, at least a part of a boundary portion between an insulating film facing the first wiring portion and the second wiring portion overlaps the third semiconductor region and does not overlap the first semiconductor region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241024&amp;DB=EPODOC&amp;CC=US&amp;NR=2024355951A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241024&amp;DB=EPODOC&amp;CC=US&amp;NR=2024355951A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWATA, JUNJI</creatorcontrib><creatorcontrib>MORIMOTO, KAZUHIRO</creatorcontrib><title>PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY</title><description>A photoelectric conversion apparatus includes an avalanche diode (APD) disposed in a semiconductor layer, and a first wiring structure, the APD including a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper than the first depth, a third semiconductor region disposed in contact with an end portion of the first semiconductor region, a first wiring portion connected to the first semiconductor region, and a second wiring portion connected to the second semiconductor region, wherein a first pad configured to apply a first voltage to the photoelectric conversion apparatus is disposed in the first wiring structure, and wherein in the planar view, at least a part of a boundary portion between an insulating film facing the first wiring portion and the second wiring portion overlaps the third semiconductor region and does not overlap the first semiconductor region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgJ8PAP8Xf1cXUOCfJ0VnD29wtzDQr29PdTcAwIcAxyDAkN1lHAqSY4MjjE1VfB0c9Fwdc_zNHJx1XByd8lkoeBNS0xpziVF0pzMyi7uYY4e-imFuTHpxYXJCan5qWWxIcGGxkYmRibmlqaGjoaGhOnCgBOyDG2</recordid><startdate>20241024</startdate><enddate>20241024</enddate><creator>IWATA, JUNJI</creator><creator>MORIMOTO, KAZUHIRO</creator><scope>EVB</scope></search><sort><creationdate>20241024</creationdate><title>PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY</title><author>IWATA, JUNJI ; MORIMOTO, KAZUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024355951A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IWATA, JUNJI</creatorcontrib><creatorcontrib>MORIMOTO, KAZUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IWATA, JUNJI</au><au>MORIMOTO, KAZUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY</title><date>2024-10-24</date><risdate>2024</risdate><abstract>A photoelectric conversion apparatus includes an avalanche diode (APD) disposed in a semiconductor layer, and a first wiring structure, the APD including a first semiconductor region disposed at a first depth, a second semiconductor region disposed at a second depth deeper than the first depth, a third semiconductor region disposed in contact with an end portion of the first semiconductor region, a first wiring portion connected to the first semiconductor region, and a second wiring portion connected to the second semiconductor region, wherein a first pad configured to apply a first voltage to the photoelectric conversion apparatus is disposed in the first wiring structure, and wherein in the planar view, at least a part of a boundary portion between an insulating film facing the first wiring portion and the second wiring portion overlaps the third semiconductor region and does not overlap the first semiconductor region.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024355951A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTOELECTRIC CONVERSION APPARATUS, PHOTOELECTRIC CONVERSION SYSTEM AND MOVABLE BODY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T12%3A16%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IWATA,%20JUNJI&rft.date=2024-10-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024355951A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true