STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CAPACITORS

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a first electrode over a substrate. A first capacitor dielectric layer is over an upper surface of the first electrode. The upper surface of the first electrode laterally extends to opposing outermost s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chung, Chiu-Hua, Chang, Chen-Chien, Luo, Guo-Jyun, Pan, Han-Zong, Lin, Shiuan-Jeng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!