STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CAPACITORS

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a first electrode over a substrate. A first capacitor dielectric layer is over an upper surface of the first electrode. The upper surface of the first electrode laterally extends to opposing outermost s...

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Hauptverfasser:	Chung, Chiu-Hua, Chang, Chen-Chien, Luo, Guo-Jyun, Pan, Han-Zong, Lin, Shiuan-Jeng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Chung, Chiu-Hua Chang, Chen-Chien Luo, Guo-Jyun Pan, Han-Zong Lin, Shiuan-Jeng
description	The present disclosure relates to a semiconductor structure. The semiconductor structure includes a first electrode over a substrate. A first capacitor dielectric layer is over an upper surface of the first electrode. The upper surface of the first electrode laterally extends to opposing outermost sidewalls of the first capacitor dielectric layer. A second electrode is over the first capacitor dielectric layer. The upper surface of the first electrode extends past opposing sides of the second electrode. A second capacitor dielectric layer is over the second electrode. A third electrode has a lower surface directly over an upper surface of the second capacitor dielectric layer and completely confined over the second electrode.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CAPACITORS
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