MEMORY, FABRICATION METHOD THEREOF AND MEMORY SYSTEM

MEMORY, FABRICATION METHOD THEREOF AND MEMORY SYSTEM

The present disclosure discloses a memory, a fabrication method thereof, and a memory system. According to an example, the memory includes a substrate, a device layer, a padding layer and a buffering protection layer. The device layer is disposed on the substrate, the padding layer is disposed at a...

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Hauptverfasser: WANG, Mengting, PAN, Zhen, PENG, Xijin, HU, Shuai, YU, Huayang, ZHANG, Pengzhen, HUANG, Qingyi, HUANG, Qikang
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WANG, Mengting
PAN, Zhen
PENG, Xijin
HU, Shuai
YU, Huayang
ZHANG, Pengzhen
HUANG, Qingyi
HUANG, Qikang
description The present disclosure discloses a memory, a fabrication method thereof, and a memory system. According to an example, the memory includes a substrate, a device layer, a padding layer and a buffering protection layer. The device layer is disposed on the substrate, the padding layer is disposed at a first side of the device layer, the buffering protection layer is disposed on a second side of the device layer and a side of the padding layer away from the substrate. The padding layer is disposed to be adjacent to the device layer in a direction parallel to the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MEMORY, FABRICATION METHOD THEREOF AND MEMORY SYSTEM
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