METHOD AND APPARATUS FOR PROCESSING SUBSTRATE

METHOD AND APPARATUS FOR PROCESSING SUBSTRATE

A method of processing a substrate includes: removing a silicon oxide portion contained in an oxide film on a surface of a metal silicide layer by supplying a hydrogen fluoride gas and an ammonia gas to the oxide film so as to react with the silicon oxide portion contained in the oxide film, wherein...

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Hauptverfasser: ISHIZAKA, Tadahiro, SAKUMA, Takashi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ISHIZAKA, Tadahiro
SAKUMA, Takashi
description A method of processing a substrate includes: removing a silicon oxide portion contained in an oxide film on a surface of a metal silicide layer by supplying a hydrogen fluoride gas and an ammonia gas to the oxide film so as to react with the silicon oxide portion contained in the oxide film, wherein the metal silicide layer is provided by being stacked in a recess formed in an insulator layer which is stacked on a silicon-containing layer; and removing a metal oxide portion by supplying a metal halide gas to the oxide film so as to react with the metal oxide portion contained in the oxide film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD AND APPARATUS FOR PROCESSING SUBSTRATE
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