BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY

An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) cell array and a first assist circuit and a differently configured second assist circuit. The first assist circuit...

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Hauptverfasser: Kachir, Elazar, Wagner, Israel A, He, Bishan, Jungmann, Noam, Joshi, Rajiv
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creator Kachir, Elazar
Wagner, Israel A
He, Bishan
Jungmann, Noam
Joshi, Rajiv
description An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) cell array and a first assist circuit and a differently configured second assist circuit. The first assist circuit is configured to apply a voltage boost to an access line utilized to access the SRAM cell array, and the second assist circuit is configured to apply a voltage boost to a voltage supply rail of the SRAM cell array. A common boost capacitor is coupled to selectively and concurrently provide a voltage boost to both the access line and the power rail via the first and second assist circuits, respectively.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024355365A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024355365A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024355365A13</originalsourceid><addsrcrecordid>eNqNjEEKwjAQRbtxIeodBlwL2truYzrWgTRTkkmhq1IkrooW6v1R0QO4-vB47y-T8cTsBbRqlCZhBx4NaqEWTQfKlqDZ6uAcWnmDxnFLJdkKWjaiKoRvLgx1MEKNQVDe0-eRnA4kHsiCghprdt06WdyGcY6b366S7RlFX3ZxevRxnoZrvMdnH3y6T49ZnmdFrg7Zf9YLK1g4Ng</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY</title><source>esp@cenet</source><creator>Kachir, Elazar ; Wagner, Israel A ; He, Bishan ; Jungmann, Noam ; Joshi, Rajiv</creator><creatorcontrib>Kachir, Elazar ; Wagner, Israel A ; He, Bishan ; Jungmann, Noam ; Joshi, Rajiv</creatorcontrib><description>An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) cell array and a first assist circuit and a differently configured second assist circuit. The first assist circuit is configured to apply a voltage boost to an access line utilized to access the SRAM cell array, and the second assist circuit is configured to apply a voltage boost to a voltage supply rail of the SRAM cell array. A common boost capacitor is coupled to selectively and concurrently provide a voltage boost to both the access line and the power rail via the first and second assist circuits, respectively.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241024&amp;DB=EPODOC&amp;CC=US&amp;NR=2024355365A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241024&amp;DB=EPODOC&amp;CC=US&amp;NR=2024355365A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kachir, Elazar</creatorcontrib><creatorcontrib>Wagner, Israel A</creatorcontrib><creatorcontrib>He, Bishan</creatorcontrib><creatorcontrib>Jungmann, Noam</creatorcontrib><creatorcontrib>Joshi, Rajiv</creatorcontrib><title>BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY</title><description>An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) cell array and a first assist circuit and a differently configured second assist circuit. The first assist circuit is configured to apply a voltage boost to an access line utilized to access the SRAM cell array, and the second assist circuit is configured to apply a voltage boost to a voltage supply rail of the SRAM cell array. A common boost capacitor is coupled to selectively and concurrently provide a voltage boost to both the access line and the power rail via the first and second assist circuits, respectively.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEEKwjAQRbtxIeodBlwL2truYzrWgTRTkkmhq1IkrooW6v1R0QO4-vB47y-T8cTsBbRqlCZhBx4NaqEWTQfKlqDZ6uAcWnmDxnFLJdkKWjaiKoRvLgx1MEKNQVDe0-eRnA4kHsiCghprdt06WdyGcY6b366S7RlFX3ZxevRxnoZrvMdnH3y6T49ZnmdFrg7Zf9YLK1g4Ng</recordid><startdate>20241024</startdate><enddate>20241024</enddate><creator>Kachir, Elazar</creator><creator>Wagner, Israel A</creator><creator>He, Bishan</creator><creator>Jungmann, Noam</creator><creator>Joshi, Rajiv</creator><scope>EVB</scope></search><sort><creationdate>20241024</creationdate><title>BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY</title><author>Kachir, Elazar ; Wagner, Israel A ; He, Bishan ; Jungmann, Noam ; Joshi, Rajiv</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024355365A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kachir, Elazar</creatorcontrib><creatorcontrib>Wagner, Israel A</creatorcontrib><creatorcontrib>He, Bishan</creatorcontrib><creatorcontrib>Jungmann, Noam</creatorcontrib><creatorcontrib>Joshi, Rajiv</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kachir, Elazar</au><au>Wagner, Israel A</au><au>He, Bishan</au><au>Jungmann, Noam</au><au>Joshi, Rajiv</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY</title><date>2024-10-24</date><risdate>2024</risdate><abstract>An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) cell array and a first assist circuit and a differently configured second assist circuit. The first assist circuit is configured to apply a voltage boost to an access line utilized to access the SRAM cell array, and the second assist circuit is configured to apply a voltage boost to a voltage supply rail of the SRAM cell array. A common boost capacitor is coupled to selectively and concurrently provide a voltage boost to both the access line and the power rail via the first and second assist circuits, respectively.</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title BOOST CAPACITOR SELECTIVELY AND CONCURRENTLY PROVIDING VOLTAGE BOOST TO MULTIPLE ASSIST CIRCUITS IN A MEMORY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T05%3A05%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kachir,%20Elazar&rft.date=2024-10-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024355365A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true