SINGLE-PHOTON AVALANCHE DIODES

SINGLE-PHOTON AVALANCHE DIODES

The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a secon...

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Hauptverfasser: GRAMUGLIA, Francesco, TOH, Eng Huat, QUEK, Kiok Boone Elgin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GRAMUGLIA, Francesco
TOH, Eng Huat
QUEK, Kiok Boone Elgin
description The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a second deep trench structure in the semiconductor substrate surrounding the first deep trench structure, the second deep trench structure having a conductive material and a material of a second polarity; and contacts to both the first deep trench structure and the second deep trench structure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SINGLE-PHOTON AVALANCHE DIODES
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