PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES

An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The exte...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHU, Li-Wei, PENG, Po-Lin, LEE, Jam-Wem, YANG, Han-Jen
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHU, Li-Wei
PENG, Po-Lin
LEE, Jam-Wem
YANG, Han-Jen
description An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024347531A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024347531A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024347531A13</originalsourceid><addsrcrecordid>eNrjZPAK8HH0cwxScPRzUfDz99OFct1cQ3SdHINdXRRcfVydQ4L8g0McQzydFVw8g509HIPcXRUCgvxDgDKe_n4KLq5hns6uwTwMrGmJOcWpvFCam0EZaIyzh25qQX58anFBYnJqXmpJfGiwkYGRibGJuamxoaOhMXGqAAG0Lj8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES</title><source>esp@cenet</source><creator>CHU, Li-Wei ; PENG, Po-Lin ; LEE, Jam-Wem ; YANG, Han-Jen</creator><creatorcontrib>CHU, Li-Wei ; PENG, Po-Lin ; LEE, Jam-Wem ; YANG, Han-Jen</creatorcontrib><description>An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241017&amp;DB=EPODOC&amp;CC=US&amp;NR=2024347531A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241017&amp;DB=EPODOC&amp;CC=US&amp;NR=2024347531A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHU, Li-Wei</creatorcontrib><creatorcontrib>PENG, Po-Lin</creatorcontrib><creatorcontrib>LEE, Jam-Wem</creatorcontrib><creatorcontrib>YANG, Han-Jen</creatorcontrib><title>PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES</title><description>An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAK8HH0cwxScPRzUfDz99OFct1cQ3SdHINdXRRcfVydQ4L8g0McQzydFVw8g509HIPcXRUCgvxDgDKe_n4KLq5hns6uwTwMrGmJOcWpvFCam0EZaIyzh25qQX58anFBYnJqXmpJfGiwkYGRibGJuamxoaOhMXGqAAG0Lj8</recordid><startdate>20241017</startdate><enddate>20241017</enddate><creator>CHU, Li-Wei</creator><creator>PENG, Po-Lin</creator><creator>LEE, Jam-Wem</creator><creator>YANG, Han-Jen</creator><scope>EVB</scope></search><sort><creationdate>20241017</creationdate><title>PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES</title><author>CHU, Li-Wei ; PENG, Po-Lin ; LEE, Jam-Wem ; YANG, Han-Jen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024347531A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHU, Li-Wei</creatorcontrib><creatorcontrib>PENG, Po-Lin</creatorcontrib><creatorcontrib>LEE, Jam-Wem</creatorcontrib><creatorcontrib>YANG, Han-Jen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHU, Li-Wei</au><au>PENG, Po-Lin</au><au>LEE, Jam-Wem</au><au>YANG, Han-Jen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES</title><date>2024-10-17</date><risdate>2024</risdate><abstract>An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024347531A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION DEVICES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T12%3A35%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHU,%20Li-Wei&rft.date=2024-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024347531A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true