MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

A microwave integrated circuit includes a passive circuit and an active device. The passive circuit includes a base substrate and passive devices. The base substrate includes a first substrate, and defines an active region and a passive region. The active region is formed with reserved pins. The pas...

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Hauptverfasser: SUN, Xiguo, WANG, Zlichen, ZHAO, Wei, LIU, Shenghou
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creator SUN, Xiguo
WANG, Zlichen
ZHAO, Wei
LIU, Shenghou
description A microwave integrated circuit includes a passive circuit and an active device. The passive circuit includes a base substrate and passive devices. The base substrate includes a first substrate, and defines an active region and a passive region. The active region is formed with reserved pins. The passive devices are disposed on the passive region. The active device includes a second substrate, an epitaxial layer, electrodes, and first conductive connectors disposed in the second substrate and the epitaxial layer. The first conductive connectors correspond in position to the electrodes for electrically connecting the electrodes to a back side of the active device. The electrodes are connected to the reserved pins in the active region via the first conductive connectors, respectively, to connect the back side of the active device to a front side of the passive circuit. A method for manufacturing the microwave integrated circuit is also provided.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024347485A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024347485A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024347485A13</originalsourceid><addsrcrecordid>eNrjZHD09XQO8g93DHNV8PQLcXUPcgxxdVFw9gxyDvUMUXD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRibGJuYmFqaOhsbEqQIAghwr1Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME</title><source>esp@cenet</source><creator>SUN, Xiguo ; WANG, Zlichen ; ZHAO, Wei ; LIU, Shenghou</creator><creatorcontrib>SUN, Xiguo ; WANG, Zlichen ; ZHAO, Wei ; LIU, Shenghou</creatorcontrib><description>A microwave integrated circuit includes a passive circuit and an active device. The passive circuit includes a base substrate and passive devices. The base substrate includes a first substrate, and defines an active region and a passive region. The active region is formed with reserved pins. The passive devices are disposed on the passive region. The active device includes a second substrate, an epitaxial layer, electrodes, and first conductive connectors disposed in the second substrate and the epitaxial layer. The first conductive connectors correspond in position to the electrodes for electrically connecting the electrodes to a back side of the active device. The electrodes are connected to the reserved pins in the active region via the first conductive connectors, respectively, to connect the back side of the active device to a front side of the passive circuit. A method for manufacturing the microwave integrated circuit is also provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241017&amp;DB=EPODOC&amp;CC=US&amp;NR=2024347485A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20241017&amp;DB=EPODOC&amp;CC=US&amp;NR=2024347485A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUN, Xiguo</creatorcontrib><creatorcontrib>WANG, Zlichen</creatorcontrib><creatorcontrib>ZHAO, Wei</creatorcontrib><creatorcontrib>LIU, Shenghou</creatorcontrib><title>MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME</title><description>A microwave integrated circuit includes a passive circuit and an active device. The passive circuit includes a base substrate and passive devices. The base substrate includes a first substrate, and defines an active region and a passive region. The active region is formed with reserved pins. The passive devices are disposed on the passive region. The active device includes a second substrate, an epitaxial layer, electrodes, and first conductive connectors disposed in the second substrate and the epitaxial layer. The first conductive connectors correspond in position to the electrodes for electrically connecting the electrodes to a back side of the active device. The electrodes are connected to the reserved pins in the active region via the first conductive connectors, respectively, to connect the back side of the active device to a front side of the passive circuit. A method for manufacturing the microwave integrated circuit is also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD09XQO8g93DHNV8PQLcXUPcgxxdVFw9gxyDvUMUXD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRibGJuYmFqaOhsbEqQIAghwr1Q</recordid><startdate>20241017</startdate><enddate>20241017</enddate><creator>SUN, Xiguo</creator><creator>WANG, Zlichen</creator><creator>ZHAO, Wei</creator><creator>LIU, Shenghou</creator><scope>EVB</scope></search><sort><creationdate>20241017</creationdate><title>MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME</title><author>SUN, Xiguo ; WANG, Zlichen ; ZHAO, Wei ; LIU, Shenghou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024347485A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUN, Xiguo</creatorcontrib><creatorcontrib>WANG, Zlichen</creatorcontrib><creatorcontrib>ZHAO, Wei</creatorcontrib><creatorcontrib>LIU, Shenghou</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUN, Xiguo</au><au>WANG, Zlichen</au><au>ZHAO, Wei</au><au>LIU, Shenghou</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME</title><date>2024-10-17</date><risdate>2024</risdate><abstract>A microwave integrated circuit includes a passive circuit and an active device. The passive circuit includes a base substrate and passive devices. The base substrate includes a first substrate, and defines an active region and a passive region. The active region is formed with reserved pins. The passive devices are disposed on the passive region. The active device includes a second substrate, an epitaxial layer, electrodes, and first conductive connectors disposed in the second substrate and the epitaxial layer. The first conductive connectors correspond in position to the electrodes for electrically connecting the electrodes to a back side of the active device. The electrodes are connected to the reserved pins in the active region via the first conductive connectors, respectively, to connect the back side of the active device to a front side of the passive circuit. A method for manufacturing the microwave integrated circuit is also provided.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MICROWAVE INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T14%3A15%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SUN,%20Xiguo&rft.date=2024-10-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024347485A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true