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A semiconductor device according to the present disclosure includes a first base fin and a second base fin extending from a substrate, an isolation feature disposed between the first base fin and the second base fin, a first dummy epitaxial layer disposed on the first base fin, a second dummy epitax...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Ju, Shi Ning, Cheng, Jung-Chien, Wang, Chih-Hao, Chen, Guan-Lin, Chiang, Kuo-Cheng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device according to the present disclosure includes a first base fin and a second base fin extending from a substrate, an isolation feature disposed between the first base fin and the second base fin, a first dummy epitaxial layer disposed on the first base fin, a second dummy epitaxial layer disposed on the second base fin, a first insulator layer over the first dummy epitaxial layer, a second insulator layer over the second dummy epitaxial layer, a first source/drain feature disposed on the first insulator layer, a second source/drain feature disposed on the second insulator layer. A thickness of the first dummy epitaxial layer measured from a top surface of the first base fin is smaller than a thickness of the second dummy epitaxial layer measured from a top surface of the second base fin.