METHOD OF MANUFACTURING SILICON WAFERS

METHOD OF MANUFACTURING SILICON WAFERS

To provide a method of manufacturing silicon wafers having a low oxygen concentration and being provided with the gettering capability of heavy metals even when the density of BMD is low. The method includes a step of placing wafers sliced from a silicon single crystal and having an oxygen concentra...

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Hauptverfasser: MATSUMURA, Hisashi, SUDO, Haruo, MAEDA, Susumu
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MATSUMURA, Hisashi
SUDO, Haruo
MAEDA, Susumu
description To provide a method of manufacturing silicon wafers having a low oxygen concentration and being provided with the gettering capability of heavy metals even when the density of BMD is low. The method includes a step of placing wafers sliced from a silicon single crystal and having an oxygen concentration in the range of 1×1016 atoms/cm3 to 7×1017 atoms/cm3, in a chamber and a step of performing rapid thermal processing at a maximum temperature reached of not less than 1250° C. or not more than 1350° C. after introducing a mixed gas having an oxygen partial pressure in the range of 1% to 10% of oxygen and an inert gas.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING SILICON WAFERS
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