SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET
A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure a...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Reddy, Nireekshan K Negri, Daria Gdor, Itay Galon, Iftach Vaknin, Yonatan Levinski, Vladimir Pio, Jordan Lubashevsky, Yuval Lahav, Oren Hill, Andrew V Volfman, Alon Alexander Isakovitch, Nickolai |
| description | A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024337952A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024337952A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024337952A13</originalsourceid><addsrcrecordid>eNrjZPAKjgwOcfVVcPRzUfB1DfHwd1Fw8w9ScHENcQ3y9fTz9HNX8A9zDfJxjARKOwaHBrn6uvqFKPi7KTgqBDs7-oFVhDgGubuG8DCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjE2Njc0tTI0dDY-JUAQAXvy5b</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET</title><source>esp@cenet</source><creator>Reddy, Nireekshan K ; Negri, Daria ; Gdor, Itay ; Galon, Iftach ; Vaknin, Yonatan ; Levinski, Vladimir ; Pio, Jordan ; Lubashevsky, Yuval ; Lahav, Oren ; Hill, Andrew V ; Volfman, Alon Alexander ; Isakovitch, Nickolai</creator><creatorcontrib>Reddy, Nireekshan K ; Negri, Daria ; Gdor, Itay ; Galon, Iftach ; Vaknin, Yonatan ; Levinski, Vladimir ; Pio, Jordan ; Lubashevsky, Yuval ; Lahav, Oren ; Hill, Andrew V ; Volfman, Alon Alexander ; Isakovitch, Nickolai</creatorcontrib><description>A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241010&DB=EPODOC&CC=US&NR=2024337952A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241010&DB=EPODOC&CC=US&NR=2024337952A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Reddy, Nireekshan K</creatorcontrib><creatorcontrib>Negri, Daria</creatorcontrib><creatorcontrib>Gdor, Itay</creatorcontrib><creatorcontrib>Galon, Iftach</creatorcontrib><creatorcontrib>Vaknin, Yonatan</creatorcontrib><creatorcontrib>Levinski, Vladimir</creatorcontrib><creatorcontrib>Pio, Jordan</creatorcontrib><creatorcontrib>Lubashevsky, Yuval</creatorcontrib><creatorcontrib>Lahav, Oren</creatorcontrib><creatorcontrib>Hill, Andrew V</creatorcontrib><creatorcontrib>Volfman, Alon Alexander</creatorcontrib><creatorcontrib>Isakovitch, Nickolai</creatorcontrib><title>SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET</title><description>A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAKjgwOcfVVcPRzUfB1DfHwd1Fw8w9ScHENcQ3y9fTz9HNX8A9zDfJxjARKOwaHBrn6uvqFKPi7KTgqBDs7-oFVhDgGubuG8DCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjE2Njc0tTI0dDY-JUAQAXvy5b</recordid><startdate>20241010</startdate><enddate>20241010</enddate><creator>Reddy, Nireekshan K</creator><creator>Negri, Daria</creator><creator>Gdor, Itay</creator><creator>Galon, Iftach</creator><creator>Vaknin, Yonatan</creator><creator>Levinski, Vladimir</creator><creator>Pio, Jordan</creator><creator>Lubashevsky, Yuval</creator><creator>Lahav, Oren</creator><creator>Hill, Andrew V</creator><creator>Volfman, Alon Alexander</creator><creator>Isakovitch, Nickolai</creator><scope>EVB</scope></search><sort><creationdate>20241010</creationdate><title>SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET</title><author>Reddy, Nireekshan K ; Negri, Daria ; Gdor, Itay ; Galon, Iftach ; Vaknin, Yonatan ; Levinski, Vladimir ; Pio, Jordan ; Lubashevsky, Yuval ; Lahav, Oren ; Hill, Andrew V ; Volfman, Alon Alexander ; Isakovitch, Nickolai</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024337952A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Reddy, Nireekshan K</creatorcontrib><creatorcontrib>Negri, Daria</creatorcontrib><creatorcontrib>Gdor, Itay</creatorcontrib><creatorcontrib>Galon, Iftach</creatorcontrib><creatorcontrib>Vaknin, Yonatan</creatorcontrib><creatorcontrib>Levinski, Vladimir</creatorcontrib><creatorcontrib>Pio, Jordan</creatorcontrib><creatorcontrib>Lubashevsky, Yuval</creatorcontrib><creatorcontrib>Lahav, Oren</creatorcontrib><creatorcontrib>Hill, Andrew V</creatorcontrib><creatorcontrib>Volfman, Alon Alexander</creatorcontrib><creatorcontrib>Isakovitch, Nickolai</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Reddy, Nireekshan K</au><au>Negri, Daria</au><au>Gdor, Itay</au><au>Galon, Iftach</au><au>Vaknin, Yonatan</au><au>Levinski, Vladimir</au><au>Pio, Jordan</au><au>Lubashevsky, Yuval</au><au>Lahav, Oren</au><au>Hill, Andrew V</au><au>Volfman, Alon Alexander</au><au>Isakovitch, Nickolai</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET</title><date>2024-10-10</date><risdate>2024</risdate><abstract>A method may include receiving time-varying interference signals from two or more photodetectors associated with a first exposure structure and a second exposure structure in one or more cells as an overlay target is scanned in accordance with a metrology recipe, where the first exposure structure and the second exposure structure form a side-by-side grating, where the side-by-side grating includes one or more diffraction gratings, where at least one diffraction grating is a non-overlapping side-by-side grating, where the first exposure structure is arranged adjacent to the second exposure structure, where the side-by-side grating is periodic along the scan direction. The method may further include determining an overlay error between one of the first exposure structure and the second exposure structure of the sample based on the time-varying interference signals, where the time-varying interference signals corresponding to the non-overlapping first exposure structure and second exposure structure are synchronized.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2024337952A1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | SYSTEM AND METHOD FOR DETERMINING OVERLAY MEASUREMENT OF A SCANNING TARGET |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T19%3A55%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Reddy,%20Nireekshan%20K&rft.date=2024-10-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024337952A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |