METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING DAISY-CHAINED DELAY CELLS

A method of forming a semiconductor device includes forming a first row of transistors extending in a first direction and including dummy transistors and active transistors. The first row includes, in a sequence from a first end to a second end, at least a first dummy group, a first delay cell, a se...

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Hauptverfasser:	YAN, Zhang-Ying, GOA, Senpei, LEI, Longbiao, MENG, Qingchao, KAO, Jerry Chang Jui, XIAN, Huaixin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
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creator	YAN, Zhang-Ying GOA, Senpei LEI, Longbiao MENG, Qingchao KAO, Jerry Chang Jui XIAN, Huaixin
description	A method of forming a semiconductor device includes forming a first row of transistors extending in a first direction and including dummy transistors and active transistors. The first row includes, in a sequence from a first end to a second end, at least a first dummy group, a first delay cell, a second delay cell, and a second dummy group. The first dummy group is formed of one or more dummy transistors. The second dummy group is formed of one or more dummy transistors. The first delay cell is formed of active transistors configured as a basic inverter and a float-resistant inverter. The second delay cell is formed of active transistors configured as at least one inverter. The first row is free of dummy transistors between the first delay cell and the second delay cell.
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subjects	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
title	METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING DAISY-CHAINED DELAY CELLS
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