METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

A method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. First to fourth active patterns are formed in the first to fourth regions, respectively. Each of the first to fourth active patterns extends in a first horizontal direction....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SEO, Myung Soo, OH, Joong Gun, KIM, Ju Youn, KIM, Jin Woo, YUN, Seul Gi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. First to fourth active patterns are formed in the first to fourth regions, respectively. Each of the first to fourth active patterns extends in a first horizontal direction. A gate insulating layer is formed on each of the first to fourth active patterns. A first gate electrode is formed in the first region and includes first and fifth layers, a second gate electrode is formed in the second region and includes first, second and fifth layers, a third gate electrode is formed in the third region and includes first, third, fourth and fifth layers and a fourth gate electrode is formed in the fourth region and includes first, second, third, fourth and fifth layers.