INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION

Integrated circuit structures having backside gate connection are described. In an example, an integrated circuit structure includes a plurality of horizontally stacked nanowires or a fin. A gate stack is over the plurality of horizontally stacked nanowires or the fin. An epitaxial source or drain s...

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Hauptverfasser:	MILLS, Shaun, KOBRINSKY, Mauro J, MANNEBACH, Ehren
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MILLS, Shaun KOBRINSKY, Mauro J MANNEBACH, Ehren
description	Integrated circuit structures having backside gate connection are described. In an example, an integrated circuit structure includes a plurality of horizontally stacked nanowires or a fin. A gate stack is over the plurality of horizontally stacked nanowires or the fin. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires or the fin. A conductive gate-to-contact connection is vertically beneath the epitaxial source or drain structure and vertically beneath and in electrical contact with the gate stack.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION
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