POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

At least one embodiment of a method of manufacturing includes forming a first polycrystalline silicon carbide (SiC) substrate with a sintering process by sintering one or more powdered semiconductor materials. After the first polycrystalline SiC substrate is formed utilizing the sintering process, t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ELLISON, Alexandre, RIVA, Carlo, MAGNUSSON LINDGREN, Björn
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!