SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION

A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material,...

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Hauptverfasser: Drachmann, Asbjørn Cennet Cliff, Manfra, Michael James, Gardner, Geoffrey Charles, Marcus, Charles Masamed
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creator Drachmann, Asbjørn Cennet Cliff
Manfra, Michael James
Gardner, Geoffrey Charles
Marcus, Charles Masamed
description A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024315148A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024315148A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024315148A13</originalsourceid><addsrcrecordid>eNrjZLALdvX1dPb3cwl1DvEP0g0ODXANgnMVPCKdgjxdFFxcwzydXRUc_VwUPEOCFdwcgaLOjiGe_n48DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwMjE2NDU0MTC0dCYOFUAMosrWA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION</title><source>esp@cenet</source><creator>Drachmann, Asbjørn Cennet Cliff ; Manfra, Michael James ; Gardner, Geoffrey Charles ; Marcus, Charles Masamed</creator><creatorcontrib>Drachmann, Asbjørn Cennet Cliff ; Manfra, Michael James ; Gardner, Geoffrey Charles ; Marcus, Charles Masamed</creatorcontrib><description>A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240919&amp;DB=EPODOC&amp;CC=US&amp;NR=2024315148A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240919&amp;DB=EPODOC&amp;CC=US&amp;NR=2024315148A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Drachmann, Asbjørn Cennet Cliff</creatorcontrib><creatorcontrib>Manfra, Michael James</creatorcontrib><creatorcontrib>Gardner, Geoffrey Charles</creatorcontrib><creatorcontrib>Marcus, Charles Masamed</creatorcontrib><title>SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION</title><description>A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALdvX1dPb3cwl1DvEP0g0ODXANgnMVPCKdgjxdFFxcwzydXRUc_VwUPEOCFdwcgaLOjiGe_n48DKxpiTnFqbxQmptB2c01xNlDN7UgPz61uCAxOTUvtSQ-NNjIwMjE2NDU0MTC0dCYOFUAMosrWA</recordid><startdate>20240919</startdate><enddate>20240919</enddate><creator>Drachmann, Asbjørn Cennet Cliff</creator><creator>Manfra, Michael James</creator><creator>Gardner, Geoffrey Charles</creator><creator>Marcus, Charles Masamed</creator><scope>EVB</scope></search><sort><creationdate>20240919</creationdate><title>SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION</title><author>Drachmann, Asbjørn Cennet Cliff ; Manfra, Michael James ; Gardner, Geoffrey Charles ; Marcus, Charles Masamed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024315148A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Drachmann, Asbjørn Cennet Cliff</creatorcontrib><creatorcontrib>Manfra, Michael James</creatorcontrib><creatorcontrib>Gardner, Geoffrey Charles</creatorcontrib><creatorcontrib>Marcus, Charles Masamed</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Drachmann, Asbjørn Cennet Cliff</au><au>Manfra, Michael James</au><au>Gardner, Geoffrey Charles</au><au>Marcus, Charles Masamed</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION</title><date>2024-09-19</date><risdate>2024</risdate><abstract>A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.</abstract><oa>free_for_read</oa></addata></record>
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title SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T02%3A31%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Drachmann,%20Asbj%C3%B8rn%20Cennet%20Cliff&rft.date=2024-09-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024315148A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true