SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

According to an embodiment of the present invention, a semiconductor device includes a first region, a second region, a third region, and a gate region. The first region is of first conductive type and formed on a surface layer on one main surface side of the semiconductor substrate. The second regi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO, Kumiko, NAGANO, Hirofumi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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