VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE
Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphi...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Jin, Quanxin Li, Shitao Shi, Shiman Bi, Jingfeng Fan, Weihong Zhao, Jinchao Guo, Maofang |
| description | Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphire substrate; dividing the epitaxial structure into epitaxial units arranged in an array, a portion of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on a portion, which is exposed between adjacent epitaxial units, of the sapphire substrate; bonding a second substrate above the first surface of the epitaxial structure; performing laser lift-off on the sapphire substrate; and removing the adhesive layer. By dividing the epitaxial structure into epitaxial units arranged in an array, the manufacturing method alleviates the problem of serious damage to the epitaxial structure caused by strong impact generated at the moment of high energy density laser lift-off. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024304757A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024304757A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024304757A13</originalsourceid><addsrcrecordid>eNqNjEELgkAQRr10iOo_DHQtMDU8D-7oDqyurLPSTSS2U5hg_58QOnTs9MHjvW8bTT054QINdOJ8Id4RKKIWvBGHPVtDAoYrLUA1i3BTgWKr6AQ1Nr7ENVlhTaKtAtHkyJaAjQJqWfDGv9_7aPMYn0s4fHcXHUuSQp_D_BrCMo_3MIX34LskTrI0zvJrjpf0P-sDmQQ4wg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE</title><source>esp@cenet</source><creator>Jin, Quanxin ; Li, Shitao ; Shi, Shiman ; Bi, Jingfeng ; Fan, Weihong ; Zhao, Jinchao ; Guo, Maofang</creator><creatorcontrib>Jin, Quanxin ; Li, Shitao ; Shi, Shiman ; Bi, Jingfeng ; Fan, Weihong ; Zhao, Jinchao ; Guo, Maofang</creatorcontrib><description>Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphire substrate; dividing the epitaxial structure into epitaxial units arranged in an array, a portion of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on a portion, which is exposed between adjacent epitaxial units, of the sapphire substrate; bonding a second substrate above the first surface of the epitaxial structure; performing laser lift-off on the sapphire substrate; and removing the adhesive layer. By dividing the epitaxial structure into epitaxial units arranged in an array, the manufacturing method alleviates the problem of serious damage to the epitaxial structure caused by strong impact generated at the moment of high energy density laser lift-off.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240912&DB=EPODOC&CC=US&NR=2024304757A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240912&DB=EPODOC&CC=US&NR=2024304757A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jin, Quanxin</creatorcontrib><creatorcontrib>Li, Shitao</creatorcontrib><creatorcontrib>Shi, Shiman</creatorcontrib><creatorcontrib>Bi, Jingfeng</creatorcontrib><creatorcontrib>Fan, Weihong</creatorcontrib><creatorcontrib>Zhao, Jinchao</creatorcontrib><creatorcontrib>Guo, Maofang</creatorcontrib><title>VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE</title><description>Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphire substrate; dividing the epitaxial structure into epitaxial units arranged in an array, a portion of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on a portion, which is exposed between adjacent epitaxial units, of the sapphire substrate; bonding a second substrate above the first surface of the epitaxial structure; performing laser lift-off on the sapphire substrate; and removing the adhesive layer. By dividing the epitaxial structure into epitaxial units arranged in an array, the manufacturing method alleviates the problem of serious damage to the epitaxial structure caused by strong impact generated at the moment of high energy density laser lift-off.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEELgkAQRr10iOo_DHQtMDU8D-7oDqyurLPSTSS2U5hg_58QOnTs9MHjvW8bTT054QINdOJ8Id4RKKIWvBGHPVtDAoYrLUA1i3BTgWKr6AQ1Nr7ENVlhTaKtAtHkyJaAjQJqWfDGv9_7aPMYn0s4fHcXHUuSQp_D_BrCMo_3MIX34LskTrI0zvJrjpf0P-sDmQQ4wg</recordid><startdate>20240912</startdate><enddate>20240912</enddate><creator>Jin, Quanxin</creator><creator>Li, Shitao</creator><creator>Shi, Shiman</creator><creator>Bi, Jingfeng</creator><creator>Fan, Weihong</creator><creator>Zhao, Jinchao</creator><creator>Guo, Maofang</creator><scope>EVB</scope></search><sort><creationdate>20240912</creationdate><title>VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE</title><author>Jin, Quanxin ; Li, Shitao ; Shi, Shiman ; Bi, Jingfeng ; Fan, Weihong ; Zhao, Jinchao ; Guo, Maofang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024304757A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Jin, Quanxin</creatorcontrib><creatorcontrib>Li, Shitao</creatorcontrib><creatorcontrib>Shi, Shiman</creatorcontrib><creatorcontrib>Bi, Jingfeng</creatorcontrib><creatorcontrib>Fan, Weihong</creatorcontrib><creatorcontrib>Zhao, Jinchao</creatorcontrib><creatorcontrib>Guo, Maofang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jin, Quanxin</au><au>Li, Shitao</au><au>Shi, Shiman</au><au>Bi, Jingfeng</au><au>Fan, Weihong</au><au>Zhao, Jinchao</au><au>Guo, Maofang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE</title><date>2024-09-12</date><risdate>2024</risdate><abstract>Disclosed is a vertical structure deep ultraviolet LED, a manufacturing method thereof and an epitaxial structure. The manufacturing method comprises: forming an epitaxial structure on a sapphire substrate, the epitaxial structure having a first surface and a second surface connected with the sapphire substrate; dividing the epitaxial structure into epitaxial units arranged in an array, a portion of the sapphire substrate being exposed between adjacent epitaxial units; forming an adhesive layer on a portion, which is exposed between adjacent epitaxial units, of the sapphire substrate; bonding a second substrate above the first surface of the epitaxial structure; performing laser lift-off on the sapphire substrate; and removing the adhesive layer. By dividing the epitaxial structure into epitaxial units arranged in an array, the manufacturing method alleviates the problem of serious damage to the epitaxial structure caused by strong impact generated at the moment of high energy density laser lift-off.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2024304757A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | VERTICAL STRUCTURE DEEP ULTRAVIOLET LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF AND EPITAXIAL STRUCTURE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T20%3A21%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jin,%20Quanxin&rft.date=2024-09-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024304757A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |