TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench struc...

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Bibliographische Detailangaben

Hauptverfasser:	DENISON, Marie, PENDHARKAR, Sameer, MATHUR, Guru
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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